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Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers

Kirchner, V. / Ebel, R. / Heinke, H. / Einfeldt, S. / Hommel, D. / Selke, H. / Ryder, P.L.

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Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers

Kirchner, V. / Ebel, R. / Heinke, H. / Einfeldt, S. / Hommel, D. / Selke, H. / Ryder, P.L.

Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers

Kirchner, V. / Ebel, R. / Heinke, H. / Einfeldt, S. / Hommel, D. / Selke, H. / Ryder, P.L.

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Document information

Title:

Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers

Contributors:

Kirchner, V. (author) / Ebel, R. (author) / Heinke, H. (author) / Einfeldt, S. (author) / Hommel, D. (author) / Selke, H. (author) / Ryder, P.L. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 59 ; 47 - 51

Publication date:

1999-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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