High quality ELO-GaN layers on GaN/Al"2O"3 patterned substrates by halide vapour phase epitaxy: Fid-Bau Portal

High quality ELO-GaN layers on GaN/Al"2O"3 patterned substrates by halide vapour phase epitaxy

Nataf, G. / Beaumont, B. / Bouille, A. / Vennegues, P. / Haffouz, S. / Vaille, M. / Gibart, P.

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High quality ELO-GaN layers on GaN/Al"2O"3 patterned substrates by halide vapour phase epitaxy

Nataf, G. / Beaumont, B. / Bouille, A. / Vennegues, P. / Haffouz, S. / Vaille, M. / Gibart, P.

High quality ELO-GaN layers on GaN/Al"2O"3 patterned substrates by halide vapour phase epitaxy

Nataf, G. / Beaumont, B. / Bouille, A. / Vennegues, P. / Haffouz, S. / Vaille, M. / Gibart, P.

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Title:

High quality ELO-GaN layers on GaN/Al"2O"3 patterned substrates by halide vapour phase epitaxy

Contributors:

Nataf, G. (author) / Beaumont, B. (author) / Bouille, A. (author) / Vennegues, P. (author) / Haffouz, S. (author) / Vaille, M. (author) / Gibart, P. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 59 ; 112 - 116

Publication date:

1999-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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