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Epitaxial growth of (2¯01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy

Nikolaev, V.I. / Pechnikov, A.I. / Stepanov, S.I. / Nikitina, I.P. / Smirnov, A.N. / Chikiryaka, A.V. / Sharofidinov, S.S. / Bougrov, V.E. / Romanov, A.E.

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Epitaxial growth of (2¯01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy

Nikolaev, V.I. / Pechnikov, A.I. / Stepanov, S.I. / Nikitina, I.P. / Smirnov, A.N. / Chikiryaka, A.V. / Sharofidinov, S.S. / Bougrov, V.E. / Romanov, A.E.

Epitaxial growth of (2¯01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy

Nikolaev, V.I. / Pechnikov, A.I. / Stepanov, S.I. / Nikitina, I.P. / Smirnov, A.N. / Chikiryaka, A.V. / Sharofidinov, S.S. / Bougrov, V.E. / Romanov, A.E.

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Title:

Epitaxial growth of (2¯01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy

Contributors:

Nikolaev, V.I. (author) / Pechnikov, A.I. (author) / Stepanov, S.I. (author) / Nikitina, I.P. (author) / Smirnov, A.N. (author) / Chikiryaka, A.V. (author) / Sharofidinov, S.S. (author) / Bougrov, V.E. (author) / Romanov, A.E. (author)

Published in:

Materials science in semiconductor processing ; 47 ; 16-19

Publication date:

2016-01-01

Size:

4 pages

ISSN:

Type of media:

Article (Journal)

Type of material:

Print

Language:

English

Classification:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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