Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide

Wellmann, P. J. / Herro, Z. / Sakwe, S. A. et al. | British Library Online Contents | 2004

Epitaxial nucleation of polycrystalline silicon carbide during chemical vapor deposition

Sheldon, B. W. / Besmann, T. M. / More, K. L. et al. | British Library Online Contents | 1993

Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy

Dudley, M. / Zhang, N. / Zhang, Y. et al. | British Library Online Contents | 2010

Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots via Physical Vapor Transport (PVT)

Basceri, C. / Khlebnikov, I. / Khlebnikov, Y. et al. | British Library Online Contents | 2006

Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

Vorob'ev, A.N. / Komissarov, A.E. / Segal, A.S. et al. | British Library Online Contents | 1999