Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

Savkina, N. S. / Lebedev, A. A. / Davydov, D. V. et al. | British Library Online Contents | 2000

Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

Savkina, N. / Tregubova, A. / Scheglov, M. et al. | British Library Online Contents | 2002

SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results

Moulin, C. / Pons, M. / Pisch, A. et al. | British Library Online Contents | 2001

AIN Crystal Growth by Sublimation Technique

Karpov, S. Y. / Kulik, A. V. / Ramm, M. S. et al. | British Library Online Contents | 2001

Growth and Electrical Characterization of 4H-SiC Epilayers

Kimoto, T. / Danno, K. / Hori, T. et al. | British Library Online Contents | 2007