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Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
Savkina, N. S. (author) / Lebedev, A. A. (author) / Davydov, D. V. (author) / Strel'chuk, A. M. (author) / Tregubova, A. S. (author) / Raynaud, C. (author) / Chante, J. P. (author) / Locatelli, M. L. (author) / Planson, D. (author) / Milan, J. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 77 ; 50 - 54
2000-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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