Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation: Fid-Bau Portal

Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

Savkina, N. / Tregubova, A. / Scheglov, M. / Solov'ev, V. / Volkova, A. / Lebedev, A.

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Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

Savkina, N. / Tregubova, A. / Scheglov, M. / Solov'ev, V. / Volkova, A. / Lebedev, A.

Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

Savkina, N. / Tregubova, A. / Scheglov, M. / Solov'ev, V. / Volkova, A. / Lebedev, A.

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Title:

Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation

Contributors:

Savkina, N. (author) / Tregubova, A. (author) / Scheglov, M. (author) / Solov'ev, V. (author) / Volkova, A. (author) / Lebedev, A. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 91-92 ; 317 - 320

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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