Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers

    New search for: Grivickas, V.
    New search for: Linnros, J.
    New search for: Grivickas, P.
    New search for: Galeckas, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers

    New search for: Grivickas, V.
    New search for: Linnros, J.
    New search for: Grivickas, P.
    New search for: Galeckas, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers

    New search for: Grivickas, V.
    New search for: Linnros, J.
    New search for: Grivickas, P.
    New search for: Galeckas, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers

    Contributors:

    Grivickas, V. (author) / Linnros, J. (author) / Grivickas, P. (author) / Galeckas, A. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 197 - 201

    Publication date:

    1999-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Depth- and Time-Resolved Free Carrier Absorption in 4H SiC Epilayers: A Study of Carrier Recombination and Transport Parameters

    Grivickas, V. / Linnros, J. / Galeckas, A. | British Library Online Contents | 1998

    A Two-Band Analysis of Electrical Transport in n-Type GaN Epilayers

    Cheong, M. G. / Oh, K. S. / Suh, E.-K. et al. | British Library Online Contents | 1998

    In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes

    O'Donnell, K. P. / White, M. E. / Pereira, S. et al. | British Library Online Contents | 2002

    Long Carrier Lifetimes in n-Type 4H-SiC Epilayers

    Klein, P.B. | British Library Online Contents | 2012

    Defect Formation and Recombination Processes in p-Type Modulation-Doped Si Epilayers

    Buyanova, I. A. / Chen, W. M. / Henry, A. et al. | British Library Online Contents | 1995

    Back to top