A platform for research: civil engineering, architecture and urbanism
A Two-Band Analysis of Electrical Transport in n-Type GaN Epilayers
A Two-Band Analysis of Electrical Transport in n-Type GaN Epilayers
A Two-Band Analysis of Electrical Transport in n-Type GaN Epilayers
Cheong, M. G. (author) / Oh, K. S. (author) / Suh, E.-K. (author) / Lee, H. J. (author)
MATERIALS SCIENCE FORUM ; 264/268 ; 1385-1388
1998-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers
British Library Online Contents | 1999
|Growth and Electrical Characterization of 4H-SiC Epilayers
British Library Online Contents | 2007
|Electrical Characterization of Erbium-Implanted 4H-SiC Epilayers
British Library Online Contents | 2003
|Electrical and Optical Properties of Highly Strained GaN Epilayers
British Library Online Contents | 1998
|Electrical properties of SiC: characterisation of bulk crystals and epilayers
British Library Online Contents | 2002
|