Hall effect investigations of 4H-SiC epitaxial layers grown on semi-insulating and conducting substrates: Fid-Bau Portal

Hall effect investigations of 4H-SiC epitaxial layers grown on semi-insulating and conducting substrates

Schoner, A. / Karlsson, S. / Schmitt, T. / Nordell, N. / Linnarsson, M. / Rottner, K.

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Hall effect investigations of 4H-SiC epitaxial layers grown on semi-insulating and conducting substrates

Schoner, A. / Karlsson, S. / Schmitt, T. / Nordell, N. / Linnarsson, M. / Rottner, K.

Hall effect investigations of 4H-SiC epitaxial layers grown on semi-insulating and conducting substrates

Schoner, A. / Karlsson, S. / Schmitt, T. / Nordell, N. / Linnarsson, M. / Rottner, K.

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Check availability in my library

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Document information

Title:

Hall effect investigations of 4H-SiC epitaxial layers grown on semi-insulating and conducting substrates

Contributors:

Schoner, A. (author) / Karlsson, S. (author) / Schmitt, T. (author) / Nordell, N. (author) / Linnarsson, M. (author) / Rottner, K. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 389 - 394

Publication date:

1999-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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