A platform for research: civil engineering, architecture and urbanism
Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates
Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates
Photo-EPR and Hall Measurements on Undoped High Purity Semi-Insulating 4H-SiC Substrates
Kalabukhova, E. N. (author) / Lukin, S. N. (author) / Savchenko, D. V. (author) / Mitchel, W. C. (author) / Mitchell, W. D. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 501-504
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates
British Library Online Contents | 2007
|Defects in High-Purity Semi-Insulating SiC
British Library Online Contents | 2004
|RF Performance and Reliability of SiC MESFETs on High Purity Semi-Insulating Substrates
British Library Online Contents | 2004
|British Library Online Contents | 2006
|Preparation and characterization of semi-insulating undoped indium phosphide
British Library Online Contents | 1994
|