A platform for research: civil engineering, architecture and urbanism
Experimental study of atmospheric pressure chemical vapor deposition of silicon carbide from methyltrichlorosilane
Experimental study of atmospheric pressure chemical vapor deposition of silicon carbide from methyltrichlorosilane
Experimental study of atmospheric pressure chemical vapor deposition of silicon carbide from methyltrichlorosilane
Papasouliotis, G. D. (author) / Sotirchos, S. V. (author)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 14 ; 3397-3409
1999-01-01
13 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Kinetic study of silicon carbide deposited from methyltrichlorosilane precursor
British Library Online Contents | 1994
|Kinetics of chemical vapor deposition of SiC from methyltrichlorosilane and hydrogen
British Library Online Contents | 2009
|British Library Online Contents | 1998
|Low pressure chemical vapor deposition of niobium coating on silicon carbide
British Library Online Contents | 2009
|Epitaxial nucleation of polycrystalline silicon carbide during chemical vapor deposition
British Library Online Contents | 1993
|