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Homoepitaxial (111) diamond grown by temperature-controlled chemical vapor deposition
Homoepitaxial (111) diamond grown by temperature-controlled chemical vapor deposition
Homoepitaxial (111) diamond grown by temperature-controlled chemical vapor deposition
Nishitani-Gamo, M. (Autor:in) / Sakaguchi, I. (Autor:in) / Takami, T. (Autor:in) / Suzuki, K. (Autor:in) / Kusunoki, I. (Autor:in) / Ando, T. (Autor:in)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 14 ; 3518-3524
01.01.1999
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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