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Near-surface lateral vacancy migration in O^+-implanted SiC studied by positron re-emission microscopy

Burrows, C.P. / Knights, A.P. / Coleman, P.G.

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Near-surface lateral vacancy migration in O^+-implanted SiC studied by positron re-emission microscopy

Burrows, C.P. / Knights, A.P. / Coleman, P.G.

Near-surface lateral vacancy migration in O^+-implanted SiC studied by positron re-emission microscopy

Burrows, C.P. / Knights, A.P. / Coleman, P.G.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Near-surface lateral vacancy migration in O^+-implanted SiC studied by positron re-emission microscopy

Contributors:

Burrows, C.P. (author) / Knights, A.P. (author) / Coleman, P.G. (author)

Published in:

APPLIED SURFACE SCIENCE ; 149 ; 135-139

Publication date:

1999-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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