Vacancy-Type Defect Distributions of ^1^1B-, ^1^4N- and ^2^7Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy: Fid-Bau Portal

Vacancy-Type Defect Distributions of ^1^1B-, ^1^4N- and ^2^7Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy

Janson, M. S. / Slotte, J. / Kuznetsov, A. Y. / Saarinen, K. / Hallen, A.

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Vacancy-Type Defect Distributions of ^1^1B-, ^1^4N- and ^2^7Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy

Janson, M. S. / Slotte, J. / Kuznetsov, A. Y. / Saarinen, K. / Hallen, A.

Vacancy-Type Defect Distributions of ^1^1B-, ^1^4N- and ^2^7Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy

Janson, M. S. / Slotte, J. / Kuznetsov, A. Y. / Saarinen, K. / Hallen, A.

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Title:

Vacancy-Type Defect Distributions of ^1^1B-, ^1^4N- and ^2^7Al-Implanted 4H-SiC Studied by Positron Annihilation Spectroscopy

Contributors:

Janson, M. S. (author) / Slotte, J. (author) / Kuznetsov, A. Y. (author) / Saarinen, K. (author) / Hallen, A. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 641-644

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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