Electronic properties of defects introduced in GaAs during sputter deposition of gold Schottky contacts

Auret, F. D. / Goodman, S. A. / Leclerc, Y. et al. | British Library Online Contents | 1997

Defects Introduced by Electron-Irradiation at Low Temperatures in SiC

Son, N.T. / Isoya, J. / Morishita, N. et al. | British Library Online Contents | 2009

Electrical Characterization of Defects Introduced During Plasma-based Processing of GaAs

Auret, F. D. / Goodman, S. A. / Myburg, G. et al. | British Library Online Contents | 1997

Electronic properties and transformation kinetics of two prominent metastable defects introduced in GaAs during sputter deposition of Au Schottky contacts

Taghizadeh, F. / Janse van Rensburg, P.J. / Ostvar, K. et al. | British Library Online Contents | 2019

Electronic and transformation properties of a metastable defect introduced in epitaxially grown sulfur doped n-GaAs by particle irradiation

Legodi, M.J. / Auret, F.D. / Goodman, S.A. | British Library Online Contents | 2000