A platform for research: civil engineering, architecture and urbanism
Efficiency of cavity gettering in single and in multicrystalline silicon wafers
Efficiency of cavity gettering in single and in multicrystalline silicon wafers
Efficiency of cavity gettering in single and in multicrystalline silicon wafers
Martinuzzi, S. (author) / Henquinet, N.G. (author) / Perichaud, I. (author) / Mathieu, G. (author) / Torregrossa, F. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 71 ; 229 - 232
2000-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Gettering of Transition Metals in Multicrystalline Silicon
British Library Online Contents | 1995
|Overview of phosphorus diffusion and gettering in multicrystalline silicon
British Library Online Contents | 2009
|As-grown iron precipitates and gettering in multicrystalline silicon
British Library Online Contents | 2009
|Rate Limiting Mechanism of Transition Metal Gettering in Multicrystalline Silicon
British Library Online Contents | 1997
|Gettering in silicon-on-insulator wafers with polysilicon layer
British Library Online Contents | 2009
|