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    Morphology and growth mechanism of silicon carbide chemical vapor deposited at low temperatures and normal atmosphere

    New search for: XU, Y.
    New search for: CHENG, L.
    New search for: ZHANG, L.
    New search for: ZHOU, W.

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    Morphology and growth mechanism of silicon carbide chemical vapor deposited at low temperatures and normal atmosphere

    New search for: XU, Y.
    New search for: CHENG, L.
    New search for: ZHANG, L.
    New search for: ZHOU, W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Morphology and growth mechanism of silicon carbide chemical vapor deposited at low temperatures and normal atmosphere

    New search for: XU, Y.
    New search for: CHENG, L.
    New search for: ZHANG, L.
    New search for: ZHOU, W.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Morphology and growth mechanism of silicon carbide chemical vapor deposited at low temperatures and normal atmosphere

    Contributors:

    XU, Y. (author) / CHENG, L. (author) / ZHANG, L. (author) / ZHOU, W. (author)

    Published in:

    JOURNAL OF MATERIALS SCIENCE ; 34 ; 551-556

    Publication date:

    1999-01-01

    Size:

    6 pages

    ISSN:

    0022-2461

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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