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Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures

Buyanova, I. A. / Monemar, B. / Lindstrom, J. L. / Hallberg, T. / Murin, L. I. / Markevich, V. P.

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Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures

Buyanova, I. A. / Monemar, B. / Lindstrom, J. L. / Hallberg, T. / Murin, L. I. / Markevich, V. P.

Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures

Buyanova, I. A. / Monemar, B. / Lindstrom, J. L. / Hallberg, T. / Murin, L. I. / Markevich, V. P.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures

Contributors:

Buyanova, I. A. (author) / Monemar, B. (author) / Lindstrom, J. L. (author) / Hallberg, T. (author) / Murin, L. I. (author) / Markevich, V. P. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 72 ; 146 - 149

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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