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Photoluminescence studies of defects created in nitrogen-doped silicon during annealing under enhanced pressure

Surma, B. / Misiuk, A. / Wnuk, A. / Bukowski, A. / Rzodkiewicz, W.

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Photoluminescence studies of defects created in nitrogen-doped silicon during annealing under enhanced pressure

Surma, B. / Misiuk, A. / Wnuk, A. / Bukowski, A. / Rzodkiewicz, W.

Photoluminescence studies of defects created in nitrogen-doped silicon during annealing under enhanced pressure

Surma, B. / Misiuk, A. / Wnuk, A. / Bukowski, A. / Rzodkiewicz, W.

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Check availability in my library

Order at Subito €

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Document information

Title:

Photoluminescence studies of defects created in nitrogen-doped silicon during annealing under enhanced pressure

Contributors:

Surma, B. (author) / Misiuk, A. (author) / Wnuk, A. (author) / Bukowski, A. (author) / Rzodkiewicz, W. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 405-409

Publication date:

2004-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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