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Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology

Popov, V. P. / Antonova, I. V. / Stas, V. F. / Mironova, L. V. / Gutakovskii, A. K. / Spesivtsev, E. V. / Mardegzhov, A. S. / Franznusov, A. A. / Feofanov, G. N.

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Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology

Popov, V. P. / Antonova, I. V. / Stas, V. F. / Mironova, L. V. / Gutakovskii, A. K. / Spesivtsev, E. V. / Mardegzhov, A. S. / Franznusov, A. A. / Feofanov, G. N.

Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology

Popov, V. P. / Antonova, I. V. / Stas, V. F. / Mironova, L. V. / Gutakovskii, A. K. / Spesivtsev, E. V. / Mardegzhov, A. S. / Franznusov, A. A. / Feofanov, G. N.

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Title:

Properties of extremely thin silicon layer in silicon-on-insulator structure formed by smart-cut technology

Contributors:

Popov, V. P. (author) / Antonova, I. V. (author) / Stas, V. F. (author) / Mironova, L. V. (author) / Gutakovskii, A. K. (author) / Spesivtsev, E. V. (author) / Mardegzhov, A. S. (author) / Franznusov, A. A. (author) / Feofanov, G. N. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 73 ; 82 - 86

Publication date:

2000-01-01

Size:

5 pages

ISSN:

Type of media:

Article (Journal)

Type of material:

Print

Language:

English

Classification:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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