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Transients during pre-breakdown and hard breakdown of thin gate oxides in metal-SiO2-Si capacitors
Transients during pre-breakdown and hard breakdown of thin gate oxides in metal-SiO2-Si capacitors
Transients during pre-breakdown and hard breakdown of thin gate oxides in metal-SiO2-Si capacitors
Lombardo, S. (author) / Crupi, F. (author) / Spinella, C. (author) / Neri, B. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 2 ; 359-367
1999-01-01
9 pages
Article (Journal)
English
DDC:
621.38152
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