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The role of multiple damaged layers at the Si/SiO2 interface on the dielectric breakdown of MOS capacitors

Sombra, S. S. / Costa, U. M. / Freire, V. N. / de Vasconcelos, E. A. / da Silva Jr, E. F.

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The role of multiple damaged layers at the Si/SiO2 interface on the dielectric breakdown of MOS capacitors

Sombra, S. S. / Costa, U. M. / Freire, V. N. / de Vasconcelos, E. A. / da Silva Jr, E. F.

The role of multiple damaged layers at the Si/SiO2 interface on the dielectric breakdown of MOS capacitors

Sombra, S. S. / Costa, U. M. / Freire, V. N. / de Vasconcelos, E. A. / da Silva Jr, E. F.

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Check availability in my library

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Document information

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Document information

Title:

The role of multiple damaged layers at the Si/SiO2 interface on the dielectric breakdown of MOS capacitors

Contributors:

Sombra, S. S. (author) / Costa, U. M. (author) / Freire, V. N. (author) / de Vasconcelos, E. A. (author) / da Silva Jr, E. F. (author)

Published in:

APPLIED SURFACE SCIENCE ; 190 ; 35-38

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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