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Transients during pre-breakdown and hard breakdown of thin gate oxides in metal-SiO2-Si capacitors
Transients during pre-breakdown and hard breakdown of thin gate oxides in metal-SiO2-Si capacitors
Transients during pre-breakdown and hard breakdown of thin gate oxides in metal-SiO2-Si capacitors
Lombardo, S. (Autor:in) / Crupi, F. (Autor:in) / Spinella, C. (Autor:in) / Neri, B. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 2 ; 359-367
01.01.1999
9 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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