First principles calculations of hydrogen annealed amorphous SiO2 structures and Si/SiO2 interface for non volatile memories: Fid-Bau Portal

First principles calculations of hydrogen annealed amorphous SiO2 structures and Si/SiO2 interface for non volatile memories

Courtot-Descharles, A. / Paillet, P. / Leray, J. L. / Musseau, O.

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First principles calculations of hydrogen annealed amorphous SiO2 structures and Si/SiO2 interface for non volatile memories

Courtot-Descharles, A. / Paillet, P. / Leray, J. L. / Musseau, O.

First principles calculations of hydrogen annealed amorphous SiO2 structures and Si/SiO2 interface for non volatile memories

Courtot-Descharles, A. / Paillet, P. / Leray, J. L. / Musseau, O.

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Check availability in my library

Order at Subito €

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Document information

Title:

First principles calculations of hydrogen annealed amorphous SiO2 structures and Si/SiO2 interface for non volatile memories

Contributors:

Courtot-Descharles, A. (author) / Paillet, P. (author) / Leray, J. L. (author) / Musseau, O. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 3 ; 143-148

Publication date:

2000-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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