Raman scattering characterization of Si-doped Ga0.52In0.48P grown by solid source molecular beam epitaxy: Fid-Bau Portal

Raman scattering characterization of Si-doped Ga0.52In0.48P grown by solid source molecular beam epitaxy

Yoon, S. F. / Lui, P. Y. / Zheng, H. Q.

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Raman scattering characterization of Si-doped Ga0.52In0.48P grown by solid source molecular beam epitaxy

Yoon, S. F. / Lui, P. Y. / Zheng, H. Q.

Raman scattering characterization of Si-doped Ga0.52In0.48P grown by solid source molecular beam epitaxy

Yoon, S. F. / Lui, P. Y. / Zheng, H. Q.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Raman scattering characterization of Si-doped Ga0.52In0.48P grown by solid source molecular beam epitaxy

Contributors:

Yoon, S. F. (author) / Lui, P. Y. (author) / Zheng, H. Q. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 76 ; 101 - 106

Publication date:

2000-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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