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Optimization of InxGa1-xP/In0.2Ga0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy
Optimization of InxGa1-xP/In0.2Ga0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy
Optimization of InxGa1-xP/In0.2Ga0.8As/GaAs high electron mobility transistor structures grown by solid source molecular beam epitaxy
Zheng, H. Q. (author) / Yoon, S. F. (author) / Gay, B. P. (author) / Mah, K. W. (author) / Radhakrishnan, K. (author) / Ng, G. I. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 75 ; 110 - 114
2000-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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