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Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11&unknown;20) Face
Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11&unknown;20) Face
Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11&unknown;20) Face
Yano, H. (author) / Hirao, T. (author) / Kimoto, T. (author) / Matsunami, H. (author) / Asano, K. (author) / Sugawara, Y. (author)
MATERIALS SCIENCE FORUM ; 338/342 ; 1105-1108
2000-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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