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4H-SiC Device Scaling Development on Repaired Micropipe Substrates

Schattner, T. E. / Casady, J. B. / Smith, M. C. D. / Mazzola, M. S. / Dmitriev, V. / Rentakova, S. V. / Saddow, S. E.

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4H-SiC Device Scaling Development on Repaired Micropipe Substrates

Schattner, T. E. / Casady, J. B. / Smith, M. C. D. / Mazzola, M. S. / Dmitriev, V. / Rentakova, S. V. / Saddow, S. E.

4H-SiC Device Scaling Development on Repaired Micropipe Substrates

Schattner, T. E. / Casady, J. B. / Smith, M. C. D. / Mazzola, M. S. / Dmitriev, V. / Rentakova, S. V. / Saddow, S. E.

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Document information

Title:

4H-SiC Device Scaling Development on Repaired Micropipe Substrates

Contributors:

Schattner, T. E. (author) / Casady, J. B. (author) / Smith, M. C. D. (author) / Mazzola, M. S. (author) / Dmitriev, V. (author) / Rentakova, S. V. (author) / Saddow, S. E. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1203-1206

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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