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A platform for research: civil engineering, architecture and urbanism
930, 170Omega.cm^2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing
930, 170Omega.cm^2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing
930, 170Omega.cm^2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing
Wang, W. (author) / Banerjee, S. (author) / Chow, T. P. (author) / Gutmann, R. J. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 1413-1416
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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