Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC: Fid-Bau Portal

Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC

Banerjee, S. / Chow, T. P. / Gutmann, R. J.

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Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC

Banerjee, S. / Chow, T. P. / Gutmann, R. J.

Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC

Banerjee, S. / Chow, T. P. / Gutmann, R. J.

Access

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC

Contributors:

Banerjee, S. (author) / Chow, T. P. (author) / Gutmann, R. J. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 757-760

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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