Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC: Fid-Bau Portal

Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC

Tang, Y. / Ramungul, N. / Chow, T. P.

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Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC

Tang, Y. / Ramungul, N. / Chow, T. P.

Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC

Tang, Y. / Ramungul, N. / Chow, T. P.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC

Contributors:

Tang, Y. (author) / Ramungul, N. (author) / Chow, T. P. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1415-1418

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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