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A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC
A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC
A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiC
Li, X. (author) / Fursin, L. (author) / Zhao, J. H. (author) / Alexandrov, P. (author) / Pan, M. (author) / Weiner, M. (author) / Burke, T. (author) / Khalil, G. (author)
MATERIALS SCIENCE FORUM ; 389/393 ; 1345-1348
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJT
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