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    Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)

    New search for: Zhu, L.
    New search for: Balachandran, S.
    New search for: Chow, T. P.
    New search for: Nipoti, R.
    New search for: Poggi, A.
    New search for: Scorzoni, A.

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    Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)

    New search for: Zhu, L.
    New search for: Balachandran, S.
    New search for: Chow, T. P.
    New search for: Nipoti, R.
    New search for: Poggi, A.
    New search for: Scorzoni, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)

    New search for: Zhu, L.
    New search for: Balachandran, S.
    New search for: Chow, T. P.
    New search for: Nipoti, R.
    New search for: Poggi, A.
    New search for: Scorzoni, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)

    Contributors:

    Zhu, L. (author) / Balachandran, S. (author) / Chow, T. P. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

    Published in:

    Silicon Carbide and Related Materials 2004 ; 917-920

    MATERIALS SCIENCE FORUM ; 483/485

    Publication date:

    2005-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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