Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy: Fid-Bau Portal

Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy

Rowland, L. B. / Dunne, G. T. / Freitas, J. A.

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Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy

Rowland, L. B. / Dunne, G. T. / Freitas, J. A.

Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy

Rowland, L. B. / Dunne, G. T. / Freitas, J. A.

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Check availability in my library

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Document information

Title:

Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy

Contributors:

Rowland, L. B. (author) / Dunne, G. T. (author) / Freitas, J. A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 161-164

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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