Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition: Fid-Bau Portal

Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition

Kordina, O. / Irvine, K. / Sumakeris, J. / Kong, H. S. / Paisley, M. J. / Carter, C. H.

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Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition

Kordina, O. / Irvine, K. / Sumakeris, J. / Kong, H. S. / Paisley, M. J. / Carter, C. H.

Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition

Kordina, O. / Irvine, K. / Sumakeris, J. / Kong, H. S. / Paisley, M. J. / Carter, C. H.

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Title:

Growth of Thick Epitaxial 4H-SiC Layers by Chemical Vapor Deposition

Contributors:

Kordina, O. (author) / Irvine, K. (author) / Sumakeris, J. (author) / Kong, H. S. (author) / Paisley, M. J. (author) / Carter, C. H. (author) / Pensl, G. / Morkoc, H. / Monemar, B. / Janzen, E.

Published in:

Silicon Carbide, III-Nitrides and Related Materials ; 107-110

MATERIALS SCIENCE FORUM ; 264/268

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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