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In-Situ RHEED Analysis During alpha-SiC Homoepitaxy on (0001)Si- and (000&unknwon;1)C- Faces by Gas Source Molecular Beam Epitaxy
In-Situ RHEED Analysis During alpha-SiC Homoepitaxy on (0001)Si- and (000&unknwon;1)C- Faces by Gas Source Molecular Beam Epitaxy
In-Situ RHEED Analysis During alpha-SiC Homoepitaxy on (0001)Si- and (000&unknwon;1)C- Faces by Gas Source Molecular Beam Epitaxy
Hatayama, T. (author) / Fuyuki, T. (author) / Nakamura, S. (author) / Kurobe, K. (author) / Kimoto, T. (author) / Matsunami, H. (author)
MATERIALS SCIENCE FORUM ; 338/342 ; 361-364
2000-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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