Growth kinetics of nanoscale SiO~2 layer in a nitric oxide (NO) ambient

Fukuda, H. / Koyama, N. / Endoh, T. et al. | British Library Online Contents | 1997

Effect of Interface Native Oxide Layer on the Properties of Annealed Ni/SiC Contacts

Huang, W. / Chang, S.H. / Liu, X.C. et al. | British Library Online Contents | 2013

Chemistry of silicon oxide annealed in ammonia

Wong, H. / Yang, B. L. / Cheng, Y. C. | British Library Online Contents | 1993

Electrical and reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide

Liu, C. H. / Chang, S. J. / Chen, J. F. et al. | British Library Online Contents | 2004

Passivation of the 4H-SiC/SiO~2 Interface with Nitric Oxide

Williams, J. R. / Chung, G. Y. / Tin, C. C. et al. | British Library Online Contents | 2002