Electrical and reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide: Fid-Bau Portal

Electrical and reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide

Liu, C. H. / Chang, S. J. / Chen, J. F. / Lee, J. S. / Chen, S. C. / Liaw, U. H.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Electrical and reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide

Liu, C. H. / Chang, S. J. / Chen, J. F. / Lee, J. S. / Chen, S. C. / Liaw, U. H.

Electrical and reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide

Liu, C. H. / Chang, S. J. / Chen, J. F. / Lee, J. S. / Chen, S. C. / Liaw, U. H.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

Electrical and reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide

Contributors:

Liu, C. H. (author) / Chang, S. J. (author) / Chen, J. F. (author) / Lee, J. S. (author) / Chen, S. C. (author) / Liaw, U. H. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 107 ; 310-316

Publication date:

2004-01-01

Size:

7 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Cheong, K. Y. / Bahng, W. / Kim, N. K. | British Library Online Contents | 2005

Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC

Bauer, A. J. / Rambach, M. / Frey, L. et al. | British Library Online Contents | 2003

NH3-RTP grown ultra-thin oxynitride layers for MOS gate applications

Chung, H. Y. / Dietl, W. / Niess, J. et al. | British Library Online Contents | 2005

Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide

Ohshima, T. / Lee, K. K. / Ohi, A. et al. | British Library Online Contents | 2002

Diluted Nitric Oxide (NO) Annealing of SiO~2/4H-SiC in Cold-Wall Oxidation Furnace

Kosugi, R. / Fukuda, K. | British Library Online Contents | 2004