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Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes

Osterman, J. / Hallen, A. / Jargelius, M. / Zimmermann, U. / Galeckas, A. / Breitholtz, B.

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Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes

Osterman, J. / Hallen, A. / Jargelius, M. / Zimmermann, U. / Galeckas, A. / Breitholtz, B.

Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes

Osterman, J. / Hallen, A. / Jargelius, M. / Zimmermann, U. / Galeckas, A. / Breitholtz, B.

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Document information

Title:

Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes

Contributors:

Osterman, J. (author) / Hallen, A. (author) / Jargelius, M. (author) / Zimmermann, U. (author) / Galeckas, A. (author) / Breitholtz, B. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 777-780

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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