Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities: Fid-Bau Portal

Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities

Dyakonova, N. V. / Ivanov, P. A. / Kozlov, V. A. / Levinshtein, M. E. / Palmour, J. W. / Rumyantsev, S. L. / Singh, R.

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Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities

Dyakonova, N. V. / Ivanov, P. A. / Kozlov, V. A. / Levinshtein, M. E. / Palmour, J. W. / Rumyantsev, S. L. / Singh, R.

Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities

Dyakonova, N. V. / Ivanov, P. A. / Kozlov, V. A. / Levinshtein, M. E. / Palmour, J. W. / Rumyantsev, S. L. / Singh, R.

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Title:

Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities

Contributors:

Dyakonova, N. V. ( author ) / Ivanov, P. A. ( author ) / Kozlov, V. A. ( author ) / Levinshtein, M. E. ( author ) / Palmour, J. W. ( author ) / Rumyantsev, S. L. ( author ) / Singh, R. ( author )

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1319-1322

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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