Lattice constant of GaN grown on 6H-SiC by MOMBE: Fid-Bau Portal

Lattice constant of GaN grown on 6H-SiC by MOMBE

Honda, T. / Fujita, N. / Maki, K. / Yamamoto, Y. / Kawanashi, H.

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Lattice constant of GaN grown on 6H-SiC by MOMBE

Honda, T. / Fujita, N. / Maki, K. / Yamamoto, Y. / Kawanashi, H.

Lattice constant of GaN grown on 6H-SiC by MOMBE

Honda, T. / Fujita, N. / Maki, K. / Yamamoto, Y. / Kawanashi, H.

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Check availability in my library

Order at Subito €

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Document information

Title:

Lattice constant of GaN grown on 6H-SiC by MOMBE

Contributors:

Honda, T. (author) / Fujita, N. (author) / Maki, K. (author) / Yamamoto, Y. (author) / Kawanashi, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 159-160 ; 468-471

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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