A platform for research: civil engineering, architecture and urbanism
Characteristics of HfO~2 Dielectric Layer Grown by MOMBE
Characteristics of HfO~2 Dielectric Layer Grown by MOMBE
Characteristics of HfO~2 Dielectric Layer Grown by MOMBE
Hong, J. H. (author) / Myoung, J. M. (author) / Kang, S.-G. / Kobayashi, T.
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Growth and characterization of MOMBE grown HfO2
British Library Online Contents | 2005
|Lattice constant of GaN grown on 6H-SiC by MOMBE
British Library Online Contents | 2000
|Structural and electrical Properties of the Ga 0.68 In 0.32 P / GaAs Heterojunction Grown by Mombe
British Library Online Contents | 1993
|GaAs growth selectivity using a GaN mask by MOMBE
British Library Online Contents | 1998
|Process Simulation for the MOMBE (Metalorganic Molecular Beam Epitaxy) Growth
British Library Conference Proceedings | 1993
|