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Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor deposition

Kitagawa, T. / Kondo, M. / Matsuda, A.

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Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor deposition

Kitagawa, T. / Kondo, M. / Matsuda, A.

Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor deposition

Kitagawa, T. / Kondo, M. / Matsuda, A.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor deposition

Contributors:

Kitagawa, T. (author) / Kondo, M. (author) / Matsuda, A. (author)

Published in:

APPLIED SURFACE SCIENCE ; 159-160 ; 30-34

Publication date:

2000-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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