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Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor deposition
Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor deposition
Hydrogen-mediated low-temperature epitaxy of Si in plasma-enhanced chemical vapor deposition
Kitagawa, T. (Autor:in) / Kondo, M. (Autor:in) / Matsuda, A. (Autor:in)
APPLIED SURFACE SCIENCE ; 159-160 ; 30-34
01.01.2000
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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