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Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces
Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces
Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces
Lucovsky, G. (author) / Phillips, J. C. (author)
APPLIED SURFACE SCIENCE ; 166 ; 497-503
2000-01-01
7 pages
Article (Journal)
English
DDC:
621.35
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