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Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices

Lucovsky, G. / Rayner Jr, G. B. / Zhang, Y. / Fulton, C. C. / Nemanich, R. J. / Appel, G. / Ade, H. / Whitten, J. L.

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Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices

Lucovsky, G. / Rayner Jr, G. B. / Zhang, Y. / Fulton, C. C. / Nemanich, R. J. / Appel, G. / Ade, H. / Whitten, J. L.

Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices

Lucovsky, G. / Rayner Jr, G. B. / Zhang, Y. / Fulton, C. C. / Nemanich, R. J. / Appel, G. / Ade, H. / Whitten, J. L.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Electronic structure of transition metal high-k dielectrics: interfacial band offset energies for microelectronic devices

Contributors:

Lucovsky, G. (author) / Rayner Jr, G. B. (author) / Zhang, Y. (author) / Fulton, C. C. (author) / Nemanich, R. J. (author) / Appel, G. (author) / Ade, H. (author) / Whitten, J. L. (author)

Published in:

APPLIED SURFACE SCIENCE ; 212-213 ; 563-569

Publication date:

2003-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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