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Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD
Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD
Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD
Nishino, S. (author) / Masuda, Y. (author) / Ohshima, S. (author) / Jacob, C. (author)
MATERIALS SCIENCE FORUM ; 353/356 ; 123-126
2001-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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