Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD: Fid-Bau Portal

Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD

Nishino, S. / Masuda, Y. / Ohshima, S. / Jacob, C.

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Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD

Nishino, S. / Masuda, Y. / Ohshima, S. / Jacob, C.

Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD

Nishino, S. / Masuda, Y. / Ohshima, S. / Jacob, C.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD

Contributors:

Nishino, S. (author) / Masuda, Y. (author) / Ohshima, S. (author) / Jacob, C. (author)

Published in:

MATERIALS SCIENCE FORUM ; 353/356 ; 123-126

Publication date:

2001-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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