A platform for research: civil engineering, architecture and urbanism
Surface Cleaning Effects of Silicon Substrates by ECR Hydrogen Plasma on Subsequent Homoepitaxial Growth
Surface Cleaning Effects of Silicon Substrates by ECR Hydrogen Plasma on Subsequent Homoepitaxial Growth
Surface Cleaning Effects of Silicon Substrates by ECR Hydrogen Plasma on Subsequent Homoepitaxial Growth
Kim, H. W. (author)
MATERIALS SCIENCE FORUM ; 475/479 ; 4067-4070
2005-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Plasma cleaning of carbon species for silicon homoepitaxial growth
British Library Online Contents | 2003
|Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD
British Library Online Contents | 2001
|Growth and properties of single crystalline GaN substrates and homoepitaxial layers
British Library Online Contents | 1997
|Low-temperature silicon homoepitaxial growth by pulsed magnetron sputtering
British Library Online Contents | 2004
|Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy
British Library Online Contents | 2002
|