Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC: Fid-Bau Portal

Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC

Sridhara, S. G. / Carlsson, F. H. C. / Bergman, J. P. / Henry, A. / Janzen, E.

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Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC

Sridhara, S. G. / Carlsson, F. H. C. / Bergman, J. P. / Henry, A. / Janzen, E.

Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC

Sridhara, S. G. / Carlsson, F. H. C. / Bergman, J. P. / Henry, A. / Janzen, E.

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Title:

Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC

Contributors:

Sridhara, S. G. (author) / Carlsson, F. H. C. (author) / Bergman, J. P. (author) / Henry, A. (author) / Janzen, E. (author)

Published in:

MATERIALS SCIENCE FORUM ; 353/356 ; 377-380

Publication date:

2001-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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